onsemi Single FETs, MOSFETs FDS2670

Description
MOSFET N-CH 200V 3A 8SOIC
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Description
MOSFET N-CH 200V 3A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS2670 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS2670
Single FETs, MOSFETs FDS2670
MOSFET N-CH 200V 3A 8SOIC

MOSFET N-CH 200V 3A 8SOIC

Supplier's Site Datasheet
Single FETs, MOSFETs - FDS2670TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS2670TR-ND
Single FETs, MOSFETs FDS2670TR-ND
N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS2670DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS2670DKR-ND
Single FETs, MOSFETs FDS2670DKR-ND
N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - FDS2670CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS2670CT-ND
Single FETs, MOSFETs FDS2670CT-ND
N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2670 - 016131-FDS2670 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2670
016131-FDS2670
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2670 016131-FDS2670
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016131-FDS2670 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS2670 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1228pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V Alternative Parts (Cross-Reference): Si4418DY; Si4418DY-E3; Si4418DY-T1-E3; Si4418DY-T1-GE3; Introduction Date: June 30, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Communications & Networking, Industrial Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016131-FDS2670
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS2670
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1228pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): Si4418DY; Si4418DY-E3; Si4418DY-T1-E3; Si4418DY-T1-GE3;
Introduction Date: June 30, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking, Industrial
Quantity per package: 2,500

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS2670
MOSFET FDS2670
MOSFET SO-8 N-CH 200V

MOSFET SO-8 N-CH 200V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS2670 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS2670
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS2670
MOSFET N-CH 200V 3A 8SOIC

MOSFET N-CH 200V 3A 8SOIC

Supplier's Site
Mosfet, N-Ch, 200V, 3A, Soic-8; Transistor Polarity Onsemi - 46AC0809 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 3A, Soic-8; Transistor Polarity Onsemi
46AC0809
Mosfet, N-Ch, 200V, 3A, Soic-8; Transistor Polarity Onsemi 46AC0809
MOSFET, N-CH, 200V, 3A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 200V, 3A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, 200V, 3A, Soic; Channel Type Onsemi - 34C0155 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 3A, Soic; Channel Type Onsemi
34C0155
N Channel Mosfet, 200V, 3A, Soic; Channel Type Onsemi 34C0155
N CHANNEL MOSFET, 200V, 3A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 3A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS2670 FDS2670TR-ND 016131-FDS2670 FDS2670 FDS2670 46AC0809 34C0155
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2670 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 200V, 3A, Soic-8; Transistor Polarity Onsemi N Channel Mosfet, 200V, 3A, Soic; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
IDSS 3000 milliamps 3000 milliamps 3000 milliamps
PD 2500 milliwatts 2500 milliwatts
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