Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016131-FDS2670
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS2670
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1228pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): Si4418DY; Si4418DY-E3; Si4418DY-T1-E3; Si4418DY-T1-GE3;
Introduction Date: June 30, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking, Industrial
Quantity per package: 2,500
MOSFET N-CH 200V 3A 8SOIC
N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 200V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET, N-CH, 200V, 3A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 3A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 200V 3A 8SOIC
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016131-FDS2670 | FDS2670 | FDS2670TR-ND | 46AC0809 | 34C0155 | FDS2670 | FDS2670 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS2670 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 3A, Soic-8; Transistor Polarity Onsemi | N Channel Mosfet, 200V, 3A, Soic; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | |||||
| PD | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
