onsemi Single FETs, MOSFETs FDPF8N50NZF

Description
N-Channel 500V 7A (Tc) 40W (Tc) Through Hole TO-220F-3
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Description
N-Channel 500V 7A (Tc) 40W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FDPF8N50NZF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDPF8N50NZF-ND
Single FETs, MOSFETs FDPF8N50NZF-ND
N-Channel 500V 7A (Tc) 40W (Tc) Through Hole TO-220F-3

N-Channel 500V 7A (Tc) 40W (Tc) Through Hole TO-220F-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF8N50NZF - 1038365-FDPF8N50NZF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF8N50NZF
1038365-FDPF8N50NZF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF8N50NZF 1038365-FDPF8N50NZF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038365-FDPF8N50NZF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 735pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 1 Ohm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038365-FDPF8N50NZF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 735pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDPF8N50NZF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDPF8N50NZF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDPF8N50NZF
MOSFET N-CH 500V 7A TO220F

MOSFET N-CH 500V 7A TO220F

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V N-Channel UniFET-II

MOSFET 500V N-Channel UniFET-II

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDPF8N50NZF-ND 1038365-FDPF8N50NZF FDPF8N50NZF FDPF8N50NZF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF8N50NZF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F TO-220; TO-220-3 Full Pack
V(BR)DSS 500 volts
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