MOSFET N-CH 500V 12A TO220F
N-Channel 500V 12A (Tc) 42W (Tc) Through Hole TO-220F-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067046-FDPF13N50FT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1930pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 540 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 500V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 500V, 12A, 150DEG C, 42W ROHS COMPLIANT: YES
MOSFET N-CH 500V 12A TO220F
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDPF13N50FT | FDPF13N50FTOS-ND | 067046-FDPF13N50FT | 89107218 | 54AH8652 | FDPF13N50FT |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF13N50FT | Transistor | Mosfet, N-Ch, 500V, 12A, 150Deg C, 42W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 500 volts | 500 volts | ||||
| IDSS | 12000 milliamps |
