Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067046-FDPF13N50FT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1930pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 540 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 500V 12A (Tc) 42W (Tc) Through Hole TO-220F-3
MOSFET N-CH 500V 12A TO220F
POWER FIELD-EFFECT TRANSISTOR, 1 Product overview: FDPF13N50FT from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDPF13N50FT can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 500V, 12A, 150DEG C, 42W ROHS COMPLIANT: YES
MOSFET N-CH 500V 12A TO220F
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 500V, 0.54OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 067046-FDPF13N50FT | FDPF13N50FTOS-ND | FDPF13N50FT | 278-FDPF13N50FT | 54AH8652 | FDPF13N50FT | 89107218 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDPF13N50FT | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET Transistor | Mosfet, N-Ch, 500V, 12A, 150Deg C, 42W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 500 volts | 500 volts | |||||
| PD | 42000 milliwatts | 42000 milliwatts | 42000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
