onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP79N15 FDP79N15

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038331-FDP79N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 463W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 79A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 3410pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 39.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038331-FDP79N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 463W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 79A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 3410pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 39.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP79N15 - 1038331-FDP79N15 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP79N15
1038331-FDP79N15
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP79N15 1038331-FDP79N15
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038331-FDP79N15 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 463W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 79A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 3410pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 39.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038331-FDP79N15
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 463W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 79A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 3410pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 30 mOhm @ 39.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - FDP79N15-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP79N15-ND
Single FETs, MOSFETs FDP79N15-ND
N-Channel 150V 79A (Tc) 463W (Tc) Through Hole TO-220-3

N-Channel 150V 79A (Tc) 463W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP79N15 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP79N15
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP79N15
MOSFET N-CH 150V 79A TO220-3

MOSFET N-CH 150V 79A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1038331-FDP79N15 FDP79N15-ND FDP79N15
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP79N15 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts
PD 463000 milliwatts
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