onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP7030BL FDP7030BL

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067031-FDP7030BL Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 5V Max Input Capacitance: 1760pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP7030BL - 067031-FDP7030BL - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDP7030BLFS-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP7030BL - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 60 A, 30 V, 9 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi - 96K9874 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067031-FDP7030BL Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 5V Max Input Capacitance: 1760pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP7030BL - 067031-FDP7030BL - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP7030BL
067031-FDP7030BL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP7030BL 067031-FDP7030BL
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067031-FDP7030BL Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 60A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 5V Max Input Capacitance: 1760pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067031-FDP7030BL
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 5V
Max Input Capacitance: 1760pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FDP7030BLFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP7030BLFS-ND
Single FETs, MOSFETs FDP7030BLFS-ND
N-Channel 30V 60A (Ta) 60W (Tc) Through Hole TO-220-3

N-Channel 30V 60A (Ta) 60W (Tc) Through Hole TO-220-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-FDP7030BL
MOSFET Transistor 278-FDP7030BL
POWER FIELD-EFFECT TRANSISTOR, 6 Product overview: FDP7030BL from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP7030BL can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 6 Product overview: FDP7030BL from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP7030BL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDP7030BL
MOSFET FDP7030BL
MOSFET N-Ch PowerTrench Logic Level

MOSFET N-Ch PowerTrench Logic Level

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP7030BL - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP7030BL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP7030BL
MOSFET N-CH 30V 60A TO220-3

MOSFET N-CH 30V 60A TO220-3

Supplier's Site
Mosfet Transistor, N Channel, 60 A, 30 V, 9 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi - 96K9874 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 60 A, 30 V, 9 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi
96K9874
Mosfet Transistor, N Channel, 60 A, 30 V, 9 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi 96K9874
MOSFET Transistor, N Channel, 60 A, 30 V, 9 mohm, 10 V, 1.9 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 60 A, 30 V, 9 mohm, 10 V, 1.9 V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067031-FDP7030BL FDP7030BLFS-ND 278-FDP7030BL FDP7030BL FDP7030BL 96K9874
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP7030BL Single FETs, MOSFETs MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 60 A, 30 V, 9 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 60000 milliwatts 60000 milliwatts
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