N-Channel 60V 55A (Tc) 114W (Tc) Through Hole TO-220-3
MOSFET N-CH 60V 55A TO220-3
MOSFETs SINGLE N-CH 60V ULTRAFET TRENCH Product overview: FDP55N06 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP55N06 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038324-FDP55N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 114W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 1510pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 27.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET N-CH 60V 55A TO220-3
MOSFET SINGLE N-CH 150V ULTRAFET TRENCH
MOSFET Transistor, N Channel, 55 A, 60 V, 0.018 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 0.018OHM, 55A, TO-220-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:55A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Through Hole; Threshold Voltage Vgs:2VRoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDP55N06-ND | FDP55N06 | 2088-FDP55N06 | 1038324-FDP55N06 | FDP55N06 | FDP55N06 | 95W3177 | 86K1373 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP55N06 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 55 A, 60 V, 0.018 Ohm, 10 V, 2 V Rohs Compliant Onsemi | Mosfet, N Channel, 60V, 0.018Ohm, 55A, To-220-3; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | Tube | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-3; TO-220 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 55000 milliamps | 55000 milliamps |
