Manufacturer: ON Semiconductor
Win Source Part Number: 919055-FDP4D5N10C
Series: PowerTrench®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 128A (Tc) 2.4W (Ta), 150W (Tc) Through Hole TO-220-3
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: FDP4D5
Categories: Discrete Semiconductor Products
Case / Package: TO-220-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Balance
Quantity per package: 800
Estimated Pruduction Lead Time: 45 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ, 800-TUBE Product overview: FDP4D5N10C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 128A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 128A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP4D5N10C can be used for catalog matching and distributor lookup.
N-Channel 100V 128A (Tc) 2.4W (Ta), 150W (Tc) Through Hole TO-220-3
MOSFET, N-CH, 100V, 128A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:128A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V RoHS Compliant: Yes
MOSFET N-CH 100V 128A TO220-3
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 919055-FDP4D5N10C | 1811859 | 1811903P | 278-FDP4D5N10C | FDP4D5N10C-ND | 65AC4707 | FDP4D5N10C | FDP4D5N10C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP4D5N10C | MOSFETs | MOSFETs | N-Channel 100V 128A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 128A, To-220; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | ||||||
| Package Type | TO-220; SOT3; TO-220-3 | TO-220; To-220 | TO-220; TO-220 | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | ||
| MOSFET Operating Mode | Enhancement |
