MOSFETs 150V NCh UltraFET Power Trench Product overview: FDP2532 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP2532 can be used for catalog matching and distributor lookup.
N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole TO-220-3
MOSFET N-CH 150V 8A/79A TO220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 088782-FDP2532
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Family Name: FDP2532
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 8A (Ta), 79A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 5870pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 33A, 10V
Alternative Parts (Cross-Reference): STP90N15F4; IRFB4228; IRFB4228PBF;
Introduction Date: June 20, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFET N-CH 150V 8A/79A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 150V, 0.016OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET 150V NCh UltraFET Power Trench
N CHANNEL MOSFET, 150V, 79A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:79A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDP2532 | FDP2532-ND | 6714803P | 6714803 | FDP2532 | 088782-FDP2532 | FDP2532 | 16115090 | FDP2532 | 58K8846 |
| Product Name | 150V MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP2532 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET | N Channel Mosfet, 150V, 79A, To-220Ab; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| PD | 310 milliwatts | 310000 milliwatts | 310000 milliwatts | |||||||
| Package Type | Tube | TO-220; TO-220-3 | TO-220; TO-220AB | TO-220; To-220ab | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
