onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP20N50 FDP20N50

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038313-FDP20N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 59.5nC @ 10V Max Input Capacitance: 3120pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038313-FDP20N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 59.5nC @ 10V Max Input Capacitance: 3120pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP20N50 - 1038313-FDP20N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP20N50
1038313-FDP20N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP20N50 1038313-FDP20N50
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038313-FDP20N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 59.5nC @ 10V Max Input Capacitance: 3120pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 230 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038313-FDP20N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 59.5nC @ 10V
Max Input Capacitance: 3120pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 230 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore
N-Channel 500V 20A TO-220 MOSFET Transistor
278-FDP20N50
N-Channel 500V 20A TO-220 MOSFET Transistor 278-FDP20N50
N-Channel MOSFET, 500V, 20A, 230mR, TO-220 Product overview: FDP20N50 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 20A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP20N50 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 500V, 20A, 230mR, TO-220 Product overview: FDP20N50 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 20A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 20A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP20N50 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDP20N50 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP20N50
Single FETs, MOSFETs FDP20N50
MOSFET N-CH 500V 20A TO220-3

MOSFET N-CH 500V 20A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP20N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP20N50-ND
Single FETs, MOSFETs FDP20N50-ND
N-Channel 500V 20A (Tc) 250W (Tc) Through Hole TO-220-3

N-Channel 500V 20A (Tc) 250W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDP20N50
MOSFET FDP20N50
MOSFET 500V NCH UNIFET MOSFET

MOSFET 500V NCH UNIFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP20N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP20N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP20N50
MOSFET N-CH 500V 20A TO220-3

MOSFET N-CH 500V 20A TO220-3

Supplier's Site
Mosfet, N, To-220; Channel Type Onsemi - 04M9103 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-220; Channel Type Onsemi
04M9103
Mosfet, N, To-220; Channel Type Onsemi 04M9103
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:250W RoHS Compliant: Yes

MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:250W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038313-FDP20N50 278-FDP20N50 FDP20N50 FDP20N50-ND FDP20N50 FDP20N50 04M9103
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP20N50 N-Channel 500V 20A TO-220 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N, To-220; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 250000 milliwatts 250000 milliwatts 250000 milliwatts 250000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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