Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204111-FDP13AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10.9A (Ta), 62A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 62A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Through Hole TO-220-3
MOSFET N-CH 60V 10.9A/62A TO220
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 204111-FDP13AN06A0 | FDP13AN06A0-ND | FDP13AN06A0 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP13AN06A0 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 60 volts | ||
| PD | 115000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |
