onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP13AN06A0 FDP13AN06A0

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204111-FDP13AN06A0
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10.9A (Ta), 62A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 62A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

MOSFET N-CH 60V 10.9A/62A TO220 Product overview: FDP13AN06A0 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10.9A, 62A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10.9A, 62A, TO220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP13AN06A0 can be used for catalog matching and distributor lookup.

N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Through Hole TO-220-3