onsemi Single FETs, MOSFETs FDP085N10A

MOSFET N-CH 100V 96A TO220-3

N-Channel 100V 96A (Tc) 188W (Tc) Through Hole TO-220-3

MOSFET N-CH 100V TO-220-3 Product overview: FDP085N10A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP085N10A can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1173867-FDP085N10A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 188W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 96A
Rds On (Maximum) at Id, Vgs: 8.5mOhm at 96A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 40nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2695pF at 50V