MOSFET N-CH 100V 96A TO220-3
N-Channel 100V 96A (Tc) 188W (Tc) Through Hole TO-220-3
MOSFET N-CH 100V 96A TO220-3
MOSFET, N-CH, 100V, 96A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.00735ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 100V N-CHANNEL POWERTRENCH MOSFET
| ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDP085N10A-F102 | FDP085N10A-F102-ND | FDP085N10A-F102 | 07AH3941 | FDP085N10A-F102 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 96A, To-220; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | ||||
| IDSS | 96000 milliamps | 96000 milliamps | |||
| PD | 188000 milliwatts |
