onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP054N10 FDP054N10

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067013-FDP054N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 263W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 203nC @ 10V Max Input Capacitance: 13280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): IRFB4310ZPBF; IXFP180N10T2; SUP70060E-GE3; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067013-FDP054N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 263W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 203nC @ 10V Max Input Capacitance: 13280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): IRFB4310ZPBF; IXFP180N10T2; SUP70060E-GE3; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP054N10 - 067013-FDP054N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP054N10
067013-FDP054N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP054N10 067013-FDP054N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067013-FDP054N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 263W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 203nC @ 10V Max Input Capacitance: 13280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): IRFB4310ZPBF; IXFP180N10T2; SUP70060E-GE3; Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067013-FDP054N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 263W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 203nC @ 10V
Max Input Capacitance: 13280pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): IRFB4310ZPBF; IXFP180N10T2; SUP70060E-GE3;
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDP054N10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDP054N10
Single FETs, MOSFETs FDP054N10
MOSFET N-CH 100V 120A TO220-3

MOSFET N-CH 100V 120A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP054N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP054N10-ND
Single FETs, MOSFETs FDP054N10-ND
N-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO-220-3

N-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore
100V MOSFET Transistor
2088-FDP054N10
100V MOSFET Transistor 2088-FDP054N10
MOSFETs 100V N-Chan PowerTrench MOSFET Product overview: FDP054N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP054N10 can be used for catalog matching and distributor lookup.

MOSFETs 100V N-Chan PowerTrench MOSFET Product overview: FDP054N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDP054N10 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP054N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP054N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP054N10
MOSFET N-CH 100V 120A TO220-3

MOSFET N-CH 100V 120A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V N-Chan PowerTrench MOSFET

MOSFET 100V N-Chan PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067013-FDP054N10 FDP054N10 FDP054N10-ND 2088-FDP054N10 FDP054N10 FDP054N10
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP054N10 Single FETs, MOSFETs Single FETs, MOSFETs 100V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 263000 milliwatts 263000 milliwatts 263 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 Tube TO-220; TO-220-3
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