FDP045N10A - 120A, 100V, N-Channel Power MOSFET, TO-220AB
MOSFET N-CH 100V 120A TO220-3
Manufacturer: ON Semiconductor
Win Source Part Number: 1173863-FDP045N10A
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 263W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 4.5mOhm at 100A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 74nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5270pF at 50V
MOSFET N-CH 100V 120A TO220-3
| Rochester Electronics | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDP045N10A | FDP045N10A | 1173863-FDP045N10A | FDP045N10A |
| Product Name | Single FETs, MOSFETs | FETs - Single - FDP045N10A | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 100 volts | 100 volts |
