onsemi MOSFET Transistor FDP040N06

Description
Power Field-Effect Transistor Product overview: FDP040N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP040N06 can be used for catalog matching and distributor lookup.
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Description
Power Field-Effect Transistor Product overview: FDP040N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP040N06 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
MOSFET Transistor 278-FDP040N06
Power Field-Effect Transistor Product overview: FDP040N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP040N06 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor Product overview: FDP040N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDP040N06 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP040N06 - 204106-FDP040N06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP040N06
204106-FDP040N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP040N06 204106-FDP040N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204106-FDP040N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 231W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 133nC @ 10V Max Input Capacitance: 8235pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204106-FDP040N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 231W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 133nC @ 10V
Max Input Capacitance: 8235pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - FDP040N06 - Rochester Electronics
Newburyport, MA, United States
120A, 60V, 0.004ohm, N-Channel Power MOSFET, TO-220AB

120A, 60V, 0.004ohm, N-Channel Power MOSFET, TO-220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - FDP040N06-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDP040N06-ND
Single FETs, MOSFETs FDP040N06-ND
N-Channel 60V 120A (Tc) 231W (Tc) Through Hole TO-220-3

N-Channel 60V 120A (Tc) 231W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDP040N06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDP040N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDP040N06
MOSFET N-CH 60V 120A TO220-3

MOSFET N-CH 60V 120A TO220-3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors
Product Number 278-FDP040N06 204106-FDP040N06 FDP040N06 FDP040N06-ND FDP040N06
Product Name MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDP040N06 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
PD 231000 milliwatts 231000 milliwatts
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F)
V(BR)DSS 60 volts
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