Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038291-FDN537N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta), 6.5A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8.4nC @ 10V
Max Input Capacitance: 465pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N-Channel 30V 6.5A (Ta), 6.5A (Tc) 1.5W (Ta) Surface Mount SOT-23-3
N-Channel 30V 6.5A (Ta), 6.5A (Tc) 1.5W (Ta) Surface Mount SOT-23-3
N-Channel 30V 6.5A (Ta), 6.5A (Tc) 1.5W (Ta) Surface Mount SOT-23-3
MOSFET N-Ch 30V 6.5A PowerTrench SSOT3
MOSFET N-Ch 30V 6.5A PowerTrench SSOT3
MOSFET N-Ch 30V 6.5A PowerTrench SSOT3
MOSFET N-CH 30V 6.5A SUPERSOT3
MOSFET N-CH 30V 6.5A SUPERSOT3
MOSFET 30V Single N-Ch PowerTrench MOSFET
30V 6.5A 23mΩ@6.5A,10V 1.5W 3V@250uA N Channel SOT-23-3 MOSFETs ROHS
MOSFET, N-CH, 30V, 8A, SUPERSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038291-FDN537N | FDN537NDKR-ND | 8648506P | 8648506 | FDN537N | FDN537N | FDN537N | FDN537N | 46AC0806 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN537N | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 30V, 8A, Supersot-3; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; SOT23; SuperSOT-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; SOT-23 | SOT23; Sot-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | TO-3; SOT3 |
