onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN358P FDN358P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016110-FDN358P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN358P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5.6nC @ 10V Max Input Capacitance: 182pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 125 mOhm @ 1.5A, 10V Alternative Parts (Cross-Reference): BSS315PL6327HTSA1; TSM650P03CX RFG; TSM2307CX RFG; Introduction Date: April 17, 1998 ECCN: EAR99 Country of Origin: Israel, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016110-FDN358P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN358P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5.6nC @ 10V Max Input Capacitance: 182pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 125 mOhm @ 1.5A, 10V Alternative Parts (Cross-Reference): BSS315PL6327HTSA1; TSM650P03CX RFG; TSM2307CX RFG; Introduction Date: April 17, 1998 ECCN: EAR99 Country of Origin: Israel, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN358P - 016110-FDN358P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN358P
016110-FDN358P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN358P 016110-FDN358P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016110-FDN358P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN358P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5.6nC @ 10V Max Input Capacitance: 182pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 125 mOhm @ 1.5A, 10V Alternative Parts (Cross-Reference): BSS315PL6327HTSA1; TSM650P03CX RFG; TSM2307CX RFG; Introduction Date: April 17, 1998 ECCN: EAR99 Country of Origin: Israel, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016110-FDN358P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN358P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 5.6nC @ 10V
Max Input Capacitance: 182pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): BSS315PL6327HTSA1; TSM650P03CX RFG; TSM2307CX RFG;
Introduction Date: April 17, 1998
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
MOSFETs - 6710450 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710450
MOSFETs 6710450
MOSFET P-Channel 30V 1.5A SuperSOT3

MOSFET P-Channel 30V 1.5A SuperSOT3

Supplier's Site
MOSFETs - 6710450P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710450P
MOSFETs 6710450P
MOSFET P-Channel 30V 1.5A SuperSOT3

MOSFET P-Channel 30V 1.5A SuperSOT3

Supplier's Site
MOSFETs - 1661806 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1661806
MOSFETs 1661806
MOSFET P-Channel 30V 1.5A SuperSOT3

MOSFET P-Channel 30V 1.5A SuperSOT3

Supplier's Site
Single FETs, MOSFETs - FDN358PCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN358PCT-ND
Single FETs, MOSFETs FDN358PCT-ND
P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3

P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - FDN358PTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN358PTR-ND
Single FETs, MOSFETs FDN358PTR-ND
P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3

P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - FDN358PDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN358PDKR-ND
Single FETs, MOSFETs FDN358PDKR-ND
P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3

P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Singapore
-30V MOSFET Transistor
2088-FDN358P
-30V MOSFET Transistor 2088-FDN358P
MOSFETs SSOT-3 P-CH -30V Product overview: FDN358P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN358P can be used for catalog matching and distributor lookup.

MOSFETs SSOT-3 P-CH -30V Product overview: FDN358P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN358P can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDN358P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDN358P
Single FETs, MOSFETs FDN358P
MOSFET P-CH 30V 1.5A SUPERSOT3

MOSFET P-CH 30V 1.5A SUPERSOT3

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDN358P
Triode/MOS Tube/Transistor >> MOSFETs FDN358P
30V 1.5A 500mW 125mΩ@10V,1.5A 3V@250uA P Channel SOT-23-3 MOSFETs ROHS

30V 1.5A 500mW 125mΩ@10V,1.5A 3V@250uA P Channel SOT-23-3 MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDN358P
MOSFET FDN358P
MOSFET SSOT-3 P-CH -30V

MOSFET SSOT-3 P-CH -30V

Buy Now Datasheet
Mosfet Transistor, P Channel, 1.6 A, 30 V, 200 Mohm, -10 V, -1.9 V Rohs Compliant Onsemi - 25M9462 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 1.6 A, 30 V, 200 Mohm, -10 V, -1.9 V Rohs Compliant Onsemi
25M9462
Mosfet Transistor, P Channel, 1.6 A, 30 V, 200 Mohm, -10 V, -1.9 V Rohs Compliant Onsemi 25M9462
MOSFET Transistor, P Channel, 1.6 A, 30 V, 200 mohm, -10 V, -1.9 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 1.6 A, 30 V, 200 mohm, -10 V, -1.9 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Full Reel; Channel Type Onsemi - 32C6163 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Channel Type Onsemi
32C6163
Mosfet, Full Reel; Channel Type Onsemi 32C6163
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V; Power Dissipation:500mW RoHS Compliant: Yes

MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V; Power Dissipation:500mW RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet, -30V, 1.5A Super Sot-3; Channel Type Onsemi - 58K8843 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 1.5A Super Sot-3; Channel Type Onsemi
58K8843
P Channel Mosfet, -30V, 1.5A Super Sot-3; Channel Type Onsemi 58K8843
P CHANNEL MOSFET, -30V, 1.5A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 1.5A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDN358P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDN358P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDN358P
MOSFET P-CH 30V 1.5A SUPERSOT3

MOSFET P-CH 30V 1.5A SUPERSOT3

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016110-FDN358P 6710450 6710450P FDN358PCT-ND 2088-FDN358P FDN358P FDN358P FDN358P 25M9462 32C6163 58K8843 FDN358P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN358P MOSFETs MOSFETs Single FETs, MOSFETs -30V MOSFET Transistor Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET Mosfet Transistor, P Channel, 1.6 A, 30 V, 200 Mohm, -10 V, -1.9 V Rohs Compliant Onsemi Mosfet, Full Reel; Channel Type Onsemi P Channel Mosfet, -30V, 1.5A Super Sot-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 500 milliwatts 500 milliwatts 500 milliwatts 500 milliwatts 500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SuperSOT-3 SOT23; Sot-23 SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 Reel SOT23; TO-236-3, SC-59, SOT-23-3 SOT23 TO-3 TO-3 TO-3; SOT3 4.5V, 10V
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