onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN357N FDN357N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016109-FDN357N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN357N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 5.9nC @ 5V Max Input Capacitance: 235pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 2.2A, 10V Alternative Parts (Cross-Reference): 2SK3290BN; 2SK3290; 2SK3290-E; Introduction Date: April 29, 1998 ECCN: EAR99 Country of Origin: Israel, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016109-FDN357N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN357N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 5.9nC @ 5V Max Input Capacitance: 235pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 2.2A, 10V Alternative Parts (Cross-Reference): 2SK3290BN; 2SK3290; 2SK3290-E; Introduction Date: April 29, 1998 ECCN: EAR99 Country of Origin: Israel, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN357N - 016109-FDN357N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN357N
016109-FDN357N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN357N 016109-FDN357N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016109-FDN357N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Family Name: FDN357N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 5.9nC @ 5V Max Input Capacitance: 235pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 2.2A, 10V Alternative Parts (Cross-Reference): 2SK3290BN; 2SK3290; 2SK3290-E; Introduction Date: April 29, 1998 ECCN: EAR99 Country of Origin: Israel, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016109-FDN357N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN357N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.9A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 5.9nC @ 5V
Max Input Capacitance: 235pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 2.2A, 10V
Alternative Parts (Cross-Reference): 2SK3290BN; 2SK3290; 2SK3290-E;
Introduction Date: April 29, 1998
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals
Quantity per package: 3k pcs

Buy Now Datasheet
Singapore
30V MOSFET Transistor
2088-FDN357N
30V MOSFET Transistor 2088-FDN357N
MOSFETs SSOT-3 N-CH 30V Product overview: FDN357N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN357N can be used for catalog matching and distributor lookup.

MOSFETs SSOT-3 N-CH 30V Product overview: FDN357N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDN357N can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDN357NCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN357NCT-ND
Single FETs, MOSFETs FDN357NCT-ND
N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - FDN357NDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN357NDKR-ND
Single FETs, MOSFETs FDN357NDKR-ND
N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - FDN357NTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDN357NTR-ND
Single FETs, MOSFETs FDN357NTR-ND
N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
MOSFETs - 6710441P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710441P
MOSFETs 6710441P
MOSFET N-Channel 30V 1.9A SuperSOT3

MOSFET N-Channel 30V 1.9A SuperSOT3

Supplier's Site
MOSFETs - 1661718 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1661718
MOSFETs 1661718
MOSFET N-Channel 30V 1.9A SuperSOT3

MOSFET N-Channel 30V 1.9A SuperSOT3

Supplier's Site
Single FETs, MOSFETs - FDN357N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDN357N
Single FETs, MOSFETs FDN357N
FDN357N - SMALL SIGNAL FIELD-EFF

FDN357N - SMALL SIGNAL FIELD-EFF

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDN357N
MOSFET FDN357N
MOSFET SSOT-3 N-CH 30V

MOSFET SSOT-3 N-CH 30V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDN357N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDN357N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDN357N
MOSFET N-CH 30V 1.9A SUPERSOT3

MOSFET N-CH 30V 1.9A SUPERSOT3

Supplier's Site
Mosfet, N Ch, 30V, 1.9A, Supersot; Transistor Polarity Onsemi - 04X6265 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 1.9A, Supersot; Transistor Polarity Onsemi
04X6265
Mosfet, N Ch, 30V, 1.9A, Supersot; Transistor Polarity Onsemi 04X6265
MOSFET, N CH, 30V, 1.9A, SUPERSOT; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

MOSFET, N CH, 30V, 1.9A, SUPERSOT; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 30V, 1.9A, Super Sot-3; Channel Type Onsemi - 58K8842 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 1.9A, Super Sot-3; Channel Type Onsemi
58K8842
N Channel Mosfet, 30V, 1.9A, Super Sot-3; Channel Type Onsemi 58K8842
N CHANNEL MOSFET, 30V, 1.9A, SUPER SOT-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 1.9A, SUPER SOT-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes

Supplier's Site
Mosfet, N, Sot-23; Transistor Polarity Onsemi - 25M9461 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, Sot-23; Transistor Polarity Onsemi
25M9461
Mosfet, N, Sot-23; Transistor Polarity Onsemi 25M9461
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:500mW; RoHS Compliant: Yes

MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:500mW; RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Full Reel; Transistor Polarity Onsemi - 67R2063 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Transistor Polarity Onsemi
67R2063
Mosfet, Full Reel; Transistor Polarity Onsemi 67R2063
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.9A; On Resistance Rds(on):0.053ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.9A; On Resistance Rds(on):0.053ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016109-FDN357N 2088-FDN357N FDN357NCT-ND 6710441P 1661718 FDN357N FDN357N FDN357N 04X6265 58K8842 25M9461
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN357N 30V MOSFET Transistor Single FETs, MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 30V, 1.9A, Supersot; Transistor Polarity Onsemi N Channel Mosfet, 30V, 1.9A, Super Sot-3; Channel Type Onsemi Mosfet, N, Sot-23; Transistor Polarity Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 500 milliwatts 500 milliwatts 500 milliwatts 500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SuperSOT-3 Reel SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; SOT-23 SOT23; Sot-23 SOT23; TO-236-3, SC-59, SOT-23-3 Surface Mount TO-3 TO-3; SOT3 TO-3; SOT23
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1052MCTR-E - 855018-2SA1052MCTR-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Single FETs, MOSFETs - AUIRFR2407-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
View Details
4 suppliers