MOSFET N-CH 20V 3A SUPERSOT3
N-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016106-FDN339AN
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN339AN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 700pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 35 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): RUR040N02TL; PMV28UNEAR; PMV30XN,215;
Introduction Date: December 29, 1999
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
Quantity per package: 3k pcs
MOSFET N-Channel 20V 3A SuperSOT3
N CHANNEL MOSFET, 20V, 3A, SUPER SOT-3; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV RoHS Compliant: Yes
MOSFET Transistor, N Channel, 3 A, 20 V, 35 mohm, 4.5 V, 850 mV RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; Power Dissipation:500mW RoHS Compliant: Yes
MOSFET N-CH 20V 3A SUPERSOT3
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDN339AN | FDN339ANCT-ND | 016106-FDN339AN | 6710431 | 6710431P | 34C0138 | 58M6631 | 67R2060 | FDN339AN |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN339AN | MOSFETs | MOSFETs | N Channel Mosfet, 20V, 3A, Super Sot-3; Channel Type Onsemi | Mosfet Transistor, N Channel, 3 A, 20 V, 35 Mohm, 4.5 V, 850 Mv Rohs Compliant Onsemi | Mosfet, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | 20 volts | |||||
| IDSS | 3000 milliamps | 3000 milliamps | 3000 milliamps | 3000 milliamps | 3000 milliamps | ||||
| PD | 500 milliwatts | 500 milliwatts | 500 milliwatts |
