The P Channel MOSFET, part number 23K1650, is designed for applications requiring a maximum drain-source voltage of -20V and a continuous drain current of 1.2A. It features a low on-resistance of 0.20 ohms at a gate-source voltage of -4.5V, making it suitable for efficient power management and load switching in portable electronics. The device is housed in a SuperSOT-3 package, which offers a compact footprint and improved power handling capabilities compared to traditional SOT23 packages. The MOSFET has a low gate charge of 3.6 nC, contributing to its fast switching performance. It operates within a junction temperature range of -55¬8C to +150¬8C, ensuring reliability in various environmental conditions. This component is RoHS compliant, aligning with modern environmental standards.
P-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
P-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
MOSFET P-CH 20V 1.3A SUPERSOT3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016103-FDN336P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Family Name: FDN336P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Max Input Capacitance: 330pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1.3A, 4.5V
Alternative Parts (Cross-Reference): PMV160UP,215; PMV160UP; TSM2301BCX;
Introduction Date: October 27, 1997
ECCN: EAR99
Country of Origin: Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
P CHANNEL MOSFET, -20V, 1.2A SUPER SOT-3; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 1.2A SUPER SOT-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:500mW RoHS Compliant: Yes
MOSFET P-CH 20V 1.3A SUPERSOT3
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDN336PTR-ND | FDN336P | 016103-FDN336P | 58K1463 | 23K1650 | FDN336P | FDN336P |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN336P | P Channel Mosfet, -20V, 1.2A Super Sot-3; Channel Type Onsemi | P Channel Mosfet, -20V, 1.2A Super Sot-3, Full Reel; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SuperSOT-3 | TO-3; SOT3 | TO-3; SOT3 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts |
