onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8888 FDMS8888

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016094-FDMS8888 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1585pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016094-FDMS8888 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1585pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8888 - 016094-FDMS8888 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8888
016094-FDMS8888
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8888 016094-FDMS8888
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016094-FDMS8888 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1585pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016094-FDMS8888
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1585pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
 - FDMS8888 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 13.5A, 30V, 0.0095ohm, N-Channel, MOSFET

Power Field-Effect Transistor, 13.5A, 30V, 0.0095ohm, N-Channel, MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMS8888TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8888TR-ND
Single FETs, MOSFETs FDMS8888TR-ND
N-Channel 30V 13.5A (Ta), 21A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 13.5A (Ta), 21A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Singapore
N-Channel 30V 21A 9.5mOhm MOSFET Transistor
2088-FDMS8888
N-Channel 30V 21A 9.5mOhm MOSFET Transistor 2088-FDMS8888
MOSFETs N-Channel PwrTrench 30V 21A 9.5mOhm Product overview: FDMS8888 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 21A, 9.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 9.5mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS8888 can be used for catalog matching and distributor lookup.

MOSFETs N-Channel PwrTrench 30V 21A 9.5mOhm Product overview: FDMS8888 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 21A, 9.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 9.5mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS8888 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8888 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8888
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8888
MOSFET N-CH 30V 13.5A/21A 8PQFN

MOSFET N-CH 30V 13.5A/21A 8PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDMS8888
MOSFET FDMS8888
MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm

MOSFET N-Channel PwrTrench 30V 21A 9.5mOhm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016094-FDMS8888 FDMS8888 FDMS8888TR-ND 2088-FDMS8888 FDMS8888 FDMS8888
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8888 Single FETs, MOSFETs N-Channel 30V 21A 9.5mOhm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 to 42000 milliwatts 42 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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