onsemi N-Channel 30V 21A 9.5mOhm MOSFET Transistor FDMS8888

MOSFETs N-Channel PwrTrench 30V 21A 9.5mOhm Product overview: FDMS8888 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 21A, 9.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 9.5mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS8888 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 13.5A, 30V, 0.0095ohm, N-Channel, MOSFET

N-Channel 30V 13.5A (Ta), 21A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount 8-PQFN (5x6)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016094-FDMS8888
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.5A (Ta), 21A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1585pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs