MOSFET N-CH 30V 28A/116A 8PQFN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040263-FDMS8820
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Family Name: FDMS8820
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Ta), 116A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 88nC @ 10V
Max Input Capacitance: 5315pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 28A, 10V
Alternative Parts (Cross-Reference): BSC020N03LS G; BSC0901NSIXT; BSC0901NSIATMA1; BSC020N03LS GXT;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N-Channel 30V 28A (Ta), 116A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 28A (Ta), 116A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 28A (Ta), 116A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 30V 28A/116A 8PQFN
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS8820 | 040263-FDMS8820 | FDMS8820CT-ND | FDMS8820 | FDMS8820 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8820 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 30 volts | 30 volts | |||
| IDSS | 28000 milliamps |