N-Channel 30V 28A (Ta), 116A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 28A (Ta), 116A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 28A (Ta), 116A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
MOSFETs NCh 30V 116A 2.4mOhm Product overview: FDMS8820 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 116A, 2.4mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 116A, 2.4mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS8820 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 28A/116A 8PQFN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040263-FDMS8820
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Family Name: FDMS8820
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Ta), 116A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 88nC @ 10V
Max Input Capacitance: 5315pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 28A, 10V
Alternative Parts (Cross-Reference): BSC020N03LS G; BSC0901NSIXT; BSC0901NSIATMA1; BSC020N03LS GXT;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 30V 28A/116A 8PQFN
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS8820CT-ND | 2088-FDMS8820 | FDMS8820 | 040263-FDMS8820 | FDMS8820 | FDMS8820 |
| Product Name | Single FETs, MOSFETs | 30V 116A 2.4mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8820 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | 8-PowerTDFN | Reel | 8-PowerTDFN | SOT3; 8-PQFN (5x6), Power56 | 88 nC @ 10 V | |
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0760 kS | |||||
| PD | 78 milliwatts | 2500 milliwatts | 2500 to 78000 milliwatts |