onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8690 FDMS8690

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 123409-FDMS8690 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta), 27A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1680pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8690 - 123409-FDMS8690 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDMS8690TR-ND - DigiKey
    DigiKey
  • FDMS8690 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8690 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 123409-FDMS8690 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta), 27A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1680pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8690 - 123409-FDMS8690 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8690
123409-FDMS8690
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8690 123409-FDMS8690
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 123409-FDMS8690 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 37.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta), 27A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1680pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 123409-FDMS8690
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 37.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta), 27A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1680pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8690TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8690TR-ND
Single FETs, MOSFETs FDMS8690TR-ND
N-Channel 30V 14A (Ta), 27A (Tc) 2.5W (Ta), 37.8W (Tc) Surface Mount 8-MLP (5x6), Power56

N-Channel 30V 14A (Ta), 27A (Tc) 2.5W (Ta), 37.8W (Tc) Surface Mount 8-MLP (5x6), Power56

Buy Now Datasheet
- FDMS8690 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDMS8690
FDMS8690
27A, 100V, 0.009ohm, N-Channel Power MOSFET

27A, 100V, 0.009ohm, N-Channel Power MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8690 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8690
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8690
MOSFET N-CH 30V 14A/27A 8MLP

MOSFET N-CH 30V 14A/27A 8MLP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors
Product Number 123409-FDMS8690 FDMS8690TR-ND FDMS8690 FDMS8690
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8690 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 to 37800 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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