onsemi Single FETs, MOSFETs FDMS8672AS

Description
N-Channel 30V 18A (Ta), 28A (Tc) 2.5W (Ta), 70W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 30V 18A (Ta), 28A (Tc) 2.5W (Ta), 70W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMS8672ASTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8672ASTR-ND
Single FETs, MOSFETs FDMS8672ASTR-ND
N-Channel 30V 18A (Ta), 28A (Tc) 2.5W (Ta), 70W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 18A (Ta), 28A (Tc) 2.5W (Ta), 70W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8672AS - 138882-FDMS8672AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8672AS
138882-FDMS8672AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8672AS 138882-FDMS8672AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 138882-FDMS8672AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 18A (Ta), 28A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 138882-FDMS8672AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18A (Ta), 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 2600pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - FDMS8672AS - Rochester Electronics
Newburyport, MA, United States
18A, 30V, 0.005ohm, N-Channel Power MOSFET

18A, 30V, 0.005ohm, N-Channel Power MOSFET

Supplier's Site Datasheet
MOSFET Transistor 278-FDMS8672AS
Power Field-Effect Transistor Product overview: FDMS8672AS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMS8672AS can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor Product overview: FDMS8672AS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMS8672AS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8672AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8672AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8672AS
MOSFET N-CH 30V 18A/28A 8PQFN

MOSFET N-CH 30V 18A/28A 8PQFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS8672ASTR-ND 138882-FDMS8672AS FDMS8672AS 278-FDMS8672AS FDMS8672AS
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8672AS MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type 8-PowerTDFN SOT3; Power56 DFN8 8-PowerTDFN
V(BR)DSS 30 volts
PD 2500 to 70000 milliwatts 70000 milliwatts
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