onsemi Single FETs, MOSFETs FDMS8670S

MOSFET N-CH 30V 20A/42A 8PQFN

POWER FIELD-EFFECT TRANSISTOR, 2

FDMS8670S - Power Field-Effect Transistor, 20A, 30V, 0.0035ohm, N-Channel, MOSFET

N-Channel 30V 20A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 115884-FDMS8670S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 4000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
Quantity per package: 3k pcs