onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S FDMS8670S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 115884-FDMS8670S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Ta), 42A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 4000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial Quantity per package: 3k pcs
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    DigiKey
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    ODG (Origin Data Global)
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  • FDMS8670S - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8670S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 115884-FDMS8670S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Ta), 42A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 4000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S - 115884-FDMS8670S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S
115884-FDMS8670S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S 115884-FDMS8670S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 115884-FDMS8670S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Ta), 42A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 4000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 115884-FDMS8670S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 4000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8670STR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8670STR-ND
Single FETs, MOSFETs FDMS8670STR-ND
N-Channel 30V 20A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 20A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8670S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS8670S
Single FETs, MOSFETs FDMS8670S
MOSFET N-CH 30V 20A/42A 8PQFN

MOSFET N-CH 30V 20A/42A 8PQFN

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMS8670S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS8670S
Single FETs, MOSFETs FDMS8670S
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
- FDMS8670S - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDMS8670S
FDMS8670S
FDMS8670S - Power Field-Effect Transistor, 20A, 30V, 0.0035ohm, N-Channel, MOSFET

FDMS8670S - Power Field-Effect Transistor, 20A, 30V, 0.0035ohm, N-Channel, MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8670S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8670S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8670S
MOSFET N-CH 30V 20A/42A 8PQFN

MOSFET N-CH 30V 20A/42A 8PQFN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMS8670S
MOSFET FDMS8670S
MOSFET 30V N-Channel PowerTrench SyncFET

MOSFET 30V N-Channel PowerTrench SyncFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Rochester Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 115884-FDMS8670S FDMS8670STR-ND FDMS8670S FDMS8670S FDMS8670S FDMS8670S
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 to 78000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; Power56 8-PowerTDFN 8-PowerTDFN DFN8 8-PowerTDFN
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