onsemi Single FETs, MOSFETs FDMS8670S

Description
FDMS8670S - Power Field-Effect Transistor, 20A, 30V, 0.0035ohm, N-Channel, MOSFET
Request a Quote Datasheet
Description
FDMS8670S - Power Field-Effect Transistor, 20A, 30V, 0.0035ohm, N-Channel, MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDMS8670S - Rochester Electronics
Newburyport, MA, United States
FDMS8670S - Power Field-Effect Transistor, 20A, 30V, 0.0035ohm, N-Channel, MOSFET

FDMS8670S - Power Field-Effect Transistor, 20A, 30V, 0.0035ohm, N-Channel, MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMS8670STR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8670STR-ND
Single FETs, MOSFETs FDMS8670STR-ND
N-Channel 30V 20A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 20A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S - 115884-FDMS8670S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S
115884-FDMS8670S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S 115884-FDMS8670S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 115884-FDMS8670S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Ta), 42A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 4000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 115884-FDMS8670S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 4000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8670S - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS8670S
Single FETs, MOSFETs FDMS8670S
MOSFET N-CH 30V 20A/42A 8PQFN

MOSFET N-CH 30V 20A/42A 8PQFN

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMS8670S - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS8670S
Single FETs, MOSFETs FDMS8670S
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V N-Channel PowerTrench SyncFET

MOSFET 30V N-Channel PowerTrench SyncFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8670S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8670S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8670S
MOSFET N-CH 30V 20A/42A 8PQFN

MOSFET N-CH 30V 20A/42A 8PQFN

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS8670S FDMS8670STR-ND 115884-FDMS8670S FDMS8670S FDMS8670S FDMS8670S
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
rDS(on) 0.0035 ohms
Package Type DFN8 8-PowerTDFN SOT3; Power56 8-PowerTDFN 8-PowerTDFN
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
V(BR)DSS 30 volts 30 volts
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