N-Channel 30V 20A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
N-Ch MOSFET 30V 42A 3.5mR SyncFET PowerTrench Product overview: FDMS8670S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMS8670S can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 115884-FDMS8670S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 4000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
Quantity per package: 3k pcs
FDMS8670S - Power Field-Effect Transistor, 20A, 30V, 0.0035ohm, N-Channel, MOSFET
MOSFET N-CH 30V 20A/42A 8PQFN
POWER FIELD-EFFECT TRANSISTOR, 2
MOSFET N-CH 30V 20A/42A 8PQFN
MOSFET 30V N-Channel PowerTrench SyncFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS8670STR-ND | 278-FDMS8670S | 115884-FDMS8670S | FDMS8670S | FDMS8670S | FDMS8670S | FDMS8670S |
| Product Name | Single FETs, MOSFETs | 30V 42A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670S | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | 8-PowerTDFN | SOT3; Power56 | DFN8 | 8-PowerTDFN | 8-PowerTDFN | ||
| PD | 2500 milliwatts | 2500 to 78000 milliwatts | 2500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 30 volts | 30 volts |