Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 125640-FDMS8670AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Family Name: FDMS8670AS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 3615pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 23A, 10V
Alternative Parts (Cross-Reference): BSC030N03LSGXT; BSC030N03LS G; BSC030N03LS GNT;
Introduction Date: July 23, 2007
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
23A, 30V, 0.003ohm, N-Channel Power MOSFET
N-Channel 30V 23A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 30V 23A/42A 8PQFN
| Win Source Electronics | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors |
| Product Number | 125640-FDMS8670AS | FDMS8670AS | FDMS8670ASTR-ND | FDMS8670AS |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8670AS | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | |||
| PD | 2500 to 78000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |