onsemi Single FETs, MOSFETs FDMS8660AS

Description
N-Channel 30V 28A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 30V 28A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMS8660ASTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8660ASTR-ND
Single FETs, MOSFETs FDMS8660ASTR-ND
N-Channel 30V 28A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 28A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
 - FDMS8660AS - Rochester Electronics
Newburyport, MA, United States
28A, 30V, 0.0021ohm, N-Channel Power MOSFET

28A, 30V, 0.0021ohm, N-Channel Power MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8660AS - 109548-FDMS8660AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8660AS
109548-FDMS8660AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8660AS 109548-FDMS8660AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 109548-FDMS8660AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 28A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 83nC @ 10V Max Input Capacitance: 5865pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.1 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 109548-FDMS8660AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Ta), 49A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 83nC @ 10V
Max Input Capacitance: 5865pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.1 mOhm @ 28A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8660AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8660AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8660AS
MOSFET N-CH 30V 28A/49A 8PQFN

MOSFET N-CH 30V 28A/49A 8PQFN

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMS8660ASTR-ND FDMS8660AS 109548-FDMS8660AS FDMS8660AS
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8660AS Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN DFN8 SOT3; Power56 8-PowerTDFN
rDS(on) 0.0021 ohms
V(BR)DSS 30 volts
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