Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016091-FDMS86540
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 6435pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.4 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFETs 60V N-Channel PowerTrench MOSFET Product overview: FDMS86540 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86540 can be used for catalog matching and distributor lookup.
N-Channel PowerTrench MOSFET 60V, 129A
N-Channel 60V 20A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 20A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 60V 20A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 60V 20A/50A 8PQFN
MOSFET N-CH 60V 20A/50A 8PQFN
MOSFET, N-CH, 60V, 129A, POWER 56; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:129A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V; Power Dissipation:96W; No. of Pins:8Pins RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016091-FDMS86540 | 2088-FDMS86540 | FDMS86540 | FDMS86540CT-ND | FDMS86540 | FDMS86540 | 46AC8817 | FDMS86540 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86540 | N-Channel 60V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 129A, Power 56; Channel Type Onsemi | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 2500 to 96000 milliwatts | 2.5 milliwatts | 2500 milliwatts | 96000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 8-PQFN (5x6), Power56 | Reel | PQFN-WIRED | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | TO-3 |
