Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038258-FDMS86102LZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7A (Ta), 22A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 1305pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Power Field-Effect Transistor, 7A, 100V, 0.025ohm, N-Channel, MOSFET, MO-240AA
MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDMS86102LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86102LZ can be used for catalog matching and distributor lookup.
N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 100V 7A/22A 8PQFN
MOSFET 100V N-Channel PowerTrench MOSFET
| Win Source Electronics | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038258-FDMS86102LZ | FDMS86102LZ | 2088-FDMS86102LZ | FDMS86102LZDKR-ND | FDMS86102LZ | FDMS86102LZ |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86102LZ | N-Channel 100V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | |||||
| PD | 2500 to 69000 milliwatts | 69 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |