onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86102LZ FDMS86102LZ

Description
Power Field-Effect Transistor, 7A, 100V, 0.025ohm, N-Channel, MOSFET, MO-240AA
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 7A, 100V, 0.025ohm, N-Channel, MOSFET, MO-240AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDMS86102LZ - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 7A, 100V, 0.025ohm, N-Channel, MOSFET, MO-240AA

Power Field-Effect Transistor, 7A, 100V, 0.025ohm, N-Channel, MOSFET, MO-240AA

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86102LZ - 1038258-FDMS86102LZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86102LZ
1038258-FDMS86102LZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86102LZ 1038258-FDMS86102LZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038258-FDMS86102LZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 7A (Ta), 22A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 1305pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038258-FDMS86102LZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7A (Ta), 22A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 1305pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86102LZDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86102LZDKR-ND
Single FETs, MOSFETs FDMS86102LZDKR-ND
N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86102LZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86102LZTR-ND
Single FETs, MOSFETs FDMS86102LZTR-ND
N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS86102LZCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS86102LZCT-ND
Single FETs, MOSFETs FDMS86102LZCT-ND
N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 100V 7A (Ta), 22A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Singapore
N-Channel 100V MOSFET Transistor
2088-FDMS86102LZ
N-Channel 100V MOSFET Transistor 2088-FDMS86102LZ
MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDMS86102LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86102LZ can be used for catalog matching and distributor lookup.

MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDMS86102LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS86102LZ can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS86102LZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS86102LZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS86102LZ
MOSFET N-CH 100V 7A/22A 8PQFN

MOSFET N-CH 100V 7A/22A 8PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V N-Channel PowerTrench MOSFET

MOSFET 100V N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDMS86102LZ 1038258-FDMS86102LZ FDMS86102LZDKR-ND 2088-FDMS86102LZ FDMS86102LZ FDMS86102LZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS86102LZ Single FETs, MOSFETs N-Channel 100V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
rDS(on) 0.0250 ohms
Package Type PQFN-WIRED-CPR SOT3; 8-PQFN (5x6), Power56 8-PowerTDFN Reel 8-PowerTDFN
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data

Similar Products

Automotive Power MOSFETs - Super J  MOS S2FD Model: FMY60N105S2FDA - Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.1050 ohms
IDSS 29300 milliamps
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS4310 - 1149865-AUIRFS4310 - Win Source Electronics
Specs
Package Type SOT3
View Details
5 suppliers
Integrated Circuits (ICs) - PMIC - Motor Drivers, Controllers - 1253318-DRV8880PWP - Win Source Electronics
Specs
TJ -40 to 150 C (-40 to 302 F)
Package Type SOT3
View Details