onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8018 FDMS8018

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 29495-FDMS8018 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta), 120A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 5235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8018 - 29495-FDMS8018 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDMS8018 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDMS8018CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMS8018TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMS8018DKR-ND - DigiKey
    DigiKey
  • FDMS8018 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8018 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 175A, 83W, Power 56; Transistor Polarity Onsemi - 99AC9177 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 29495-FDMS8018 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta), 120A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 5235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8018 - 29495-FDMS8018 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8018
29495-FDMS8018
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8018 29495-FDMS8018
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 29495-FDMS8018 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta), 120A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 5235pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 29495-FDMS8018
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Ta), 120A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 5235pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8018 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS8018
Single FETs, MOSFETs FDMS8018
MOSFET N-CH 30V 30A/120A 8PQFN

MOSFET N-CH 30V 30A/120A 8PQFN

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMS8018CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8018CT-ND
Single FETs, MOSFETs FDMS8018CT-ND
N-Channel 30V 30A (Ta), 120A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 30A (Ta), 120A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8018TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8018TR-ND
Single FETs, MOSFETs FDMS8018TR-ND
N-Channel 30V 30A (Ta), 120A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 30A (Ta), 120A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS8018DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS8018DKR-ND
Single FETs, MOSFETs FDMS8018DKR-ND
N-Channel 30V 30A (Ta), 120A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 30A (Ta), 120A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
- FDMS8018 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDMS8018
FDMS8018
Power Field-Effect Transistor, 30A, 30V, 0.0018ohm, N-Channel, MOSFET, MO-240AA

Power Field-Effect Transistor, 30A, 30V, 0.0018ohm, N-Channel, MOSFET, MO-240AA

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS8018 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS8018
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS8018
MOSFET N-CH 30V 30A/120A 8PQFN

MOSFET N-CH 30V 30A/120A 8PQFN

Supplier's Site
Mosfet, N-Ch, 30V, 175A, 83W, Power 56; Transistor Polarity Onsemi - 99AC9177 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 175A, 83W, Power 56; Transistor Polarity Onsemi
99AC9177
Mosfet, N-Ch, 30V, 175A, 83W, Power 56; Transistor Polarity Onsemi 99AC9177
MOSFET, N-CH, 30V, 175A, 83W, POWER 56; Transistor Polarity:N Channel; Continuous Drain Current Id:175A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 175A, 83W, POWER 56; Transistor Polarity:N Channel; Continuous Drain Current Id:175A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMS8018
MOSFET FDMS8018
MOSFET 30V N-Channel PowerTrench MOSFET

MOSFET 30V N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 29495-FDMS8018 FDMS8018 FDMS8018CT-ND FDMS8018 FDMS8018 99AC9177 FDMS8018
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS8018 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 175A, 83W, Power 56; Transistor Polarity Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 to 83000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-PQFN (5x6), Power56 8-PowerTDFN 8-PowerTDFN PQFN-WIRED 8-PowerTDFN TO-3
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