onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7678 FDMS7678

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016078-FDMS7678 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17.5A (Ta), 26A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 2410pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7678 - 016078-FDMS7678 - Win Source Electronics
    Win Source Electronics
  • FDMS7678 - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - FDMS7678CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMS7678DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMS7678TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMS7678 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet Transistor, N Channel, 26 A, 30 V, 0.0047 Ohm, 10 V, 1.5 V Rohs Compliant Onsemi - 55W4085 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS7678 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016078-FDMS7678 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17.5A (Ta), 26A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 2410pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7678 - 016078-FDMS7678 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7678
016078-FDMS7678
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7678 016078-FDMS7678
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016078-FDMS7678 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6), Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17.5A (Ta), 26A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 2410pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016078-FDMS7678
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17.5A (Ta), 26A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2410pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
- FDMS7678 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDMS7678
FDMS7678
Power Field-Effect Transistor, 17.5A, 30V, 0.0055ohm, N-Channel, MOSFET, MO-240AA

Power Field-Effect Transistor, 17.5A, 30V, 0.0055ohm, N-Channel, MOSFET, MO-240AA

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMS7678CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS7678CT-ND
Single FETs, MOSFETs FDMS7678CT-ND
N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS7678DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS7678DKR-ND
Single FETs, MOSFETs FDMS7678DKR-ND
N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS7678TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS7678TR-ND
Single FETs, MOSFETs FDMS7678TR-ND
N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS7678 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS7678
Single FETs, MOSFETs FDMS7678
MOSFET N-CH 30V 17.5A/26A 8PQFN

MOSFET N-CH 30V 17.5A/26A 8PQFN

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 26 A, 30 V, 0.0047 Ohm, 10 V, 1.5 V Rohs Compliant Onsemi - 55W4085 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 26 A, 30 V, 0.0047 Ohm, 10 V, 1.5 V Rohs Compliant Onsemi
55W4085
Mosfet Transistor, N Channel, 26 A, 30 V, 0.0047 Ohm, 10 V, 1.5 V Rohs Compliant Onsemi 55W4085
MOSFET Transistor, N Channel, 26 A, 30 V, 0.0047 ohm, 10 V, 1.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 26 A, 30 V, 0.0047 ohm, 10 V, 1.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS7678 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS7678
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS7678
MOSFET N-CH 30V 17.5A/26A 8PQFN

MOSFET N-CH 30V 17.5A/26A 8PQFN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMS7678
MOSFET FDMS7678
MOSFET 30V/20V N-Ch PowerTrench SyncFET

MOSFET 30V/20V N-Ch PowerTrench SyncFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016078-FDMS7678 FDMS7678 FDMS7678CT-ND FDMS7678 55W4085 FDMS7678 FDMS7678
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7678 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet Transistor, N Channel, 26 A, 30 V, 0.0047 Ohm, 10 V, 1.5 V Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2300 to 41000 milliwatts 2300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-PQFN (5x6), Power56 PQFN-WIRED-CPR 8-PowerTDFN 8-PowerTDFN TO-3 8-PowerTDFN
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