Power Field-Effect Transistor, 21A, 30V, 0.0038ohm, N-Channel, MOSFET, MO-240AA
Power Field-Effect Transistor, 21A, 30V, 0.0038ohm, N-Channel, MOSFET, MO-240AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066997-FDMS7670
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 22A (Ta), 42A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 4225pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET N-CH 30V 21A/42A 8PQFN
N-Channel 30V 21A (Ta), 42A (Tc) 2.5W (Ta), 62W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 21A (Ta), 42A (Tc) 2.5W (Ta), 62W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 30V 21A (Ta), 42A (Tc) 2.5W (Ta), 62W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET 30V 42A N-Channel PowerTrench
MOSFET N-CH 30V 21A/42A 8PQFN
MOSFET, N CHANNEL, 30V, 0.0029OHM, 42A, POWER 56-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:42A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:62W RoHS Compliant: Yes
| Rochester Electronics | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMS7670 | 066997-FDMS7670 | FDMS7670 | FDMS7670TR-ND | FDMS7670 | FDMS7670 | 84W8863 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7670 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 30V, 0.0029Ohm, 42A, Power 56-8; Channel Type Onsemi | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| rDS(on) | 0.0038 ohms | ||||||
| Package Type | PQFN-WIRED | SOT3; Power56 | 8-PowerTDFN | 8-PowerTDFN | Surface Mount | TO-3 | |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| V(BR)DSS | 30 volts | 30 volts |
