Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038240-FDMS7572S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 23A (Ta), 49A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2780pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.9 mOhm @ 23A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Power Field-Effect Transistor, 23A, 25V, 0.0029ohm, N-Channel, MOSFET, MO-240AA
Power Field-Effect Transistor, 23A, 25V, 0.0029ohm, N-Channel, MOSFET, MO-240AA
N-Channel 25V 23A (Ta), 49A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 25V 23A/49A 8QFN
MOSFET N-CH 25V 23A/49A 8QFN
N-Channel 25V 23A (Ta), 49A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 25V 23A/49A 8PQFN
| Win Source Electronics | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors |
| Product Number | 1038240-FDMS7572S | FDMS7572S | FDMS7572STR-ND | FDMS7572S |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS7572S | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 25 volts | |||
| PD | 2500 to 46000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |
