onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS6681Z FDMS6681Z

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 138307-FDMS6681Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Family Name: FDMS6681Z Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21.1A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 241nC @ 10V Max Input Capacitance: 10380pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 22.1A, 10V Alternative Parts (Cross-Reference): RS1E220ATTB1; RS1E260ATTB1; BSC030P03NS3GXT; BSC030P03NS3 G; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 138307-FDMS6681Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Family Name: FDMS6681Z Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21.1A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 241nC @ 10V Max Input Capacitance: 10380pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 22.1A, 10V Alternative Parts (Cross-Reference): RS1E220ATTB1; RS1E260ATTB1; BSC030P03NS3GXT; BSC030P03NS3 G; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS6681Z - 138307-FDMS6681Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS6681Z
138307-FDMS6681Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS6681Z 138307-FDMS6681Z
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 138307-FDMS6681Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Family Name: FDMS6681Z Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21.1A (Ta), 49A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 241nC @ 10V Max Input Capacitance: 10380pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 22.1A, 10V Alternative Parts (Cross-Reference): RS1E220ATTB1; RS1E260ATTB1; BSC030P03NS3GXT; BSC030P03NS3 G; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 138307-FDMS6681Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Family Name: FDMS6681Z
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21.1A (Ta), 49A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 241nC @ 10V
Max Input Capacitance: 10380pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 22.1A, 10V
Alternative Parts (Cross-Reference): RS1E220ATTB1; RS1E260ATTB1; BSC030P03NS3GXT; BSC030P03NS3 G;
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMS6681ZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMS6681ZTR-ND
Single FETs, MOSFETs FDMS6681ZTR-ND
P-Channel 30V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6)

P-Channel 30V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - FDMS6681Z - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMS6681Z
Single FETs, MOSFETs FDMS6681Z
MOSFET P-CH 30V 21.1A/49A 8PQFN

MOSFET P-CH 30V 21.1A/49A 8PQFN

Supplier's Site Datasheet
Singapore
P-Channel -30V MOSFET Transistor
2088-FDMS6681Z
P-Channel -30V MOSFET Transistor 2088-FDMS6681Z
MOSFETs -30V P-Channel PowerTrench Product overview: FDMS6681Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS6681Z can be used for catalog matching and distributor lookup.

MOSFETs -30V P-Channel PowerTrench Product overview: FDMS6681Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMS6681Z can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET P-CH 30V 21.1A POWER56 - 598-FDMS6681Z - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V 21.1A POWER56
598-FDMS6681Z
MOSFET P-CH 30V 21.1A POWER56 598-FDMS6681Z
MOSFET P-CH 30V 21.1A POWER56

MOSFET P-CH 30V 21.1A POWER56

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -30V P-Channel PowerTrench

MOSFET -30V P-Channel PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMS6681Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMS6681Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMS6681Z
MOSFET P-CH 30V 21.1A/49A 8PQFN

MOSFET P-CH 30V 21.1A/49A 8PQFN

Supplier's Site
Mosfet, P Channel, -30V, 0.0027Ohm, -49A, Power 56-8; Channel Type Onsemi - 85W3148 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, 0.0027Ohm, -49A, Power 56-8; Channel Type Onsemi
85W3148
Mosfet, P Channel, -30V, 0.0027Ohm, -49A, Power 56-8; Channel Type Onsemi 85W3148
MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:49A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:73W RoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, 0.0027OHM, -49A, POWER 56-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:49A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:73W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 138307-FDMS6681Z FDMS6681ZTR-ND FDMS6681Z 2088-FDMS6681Z 598-FDMS6681Z FDMS6681Z FDMS6681Z 85W3148
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS6681Z Single FETs, MOSFETs Single FETs, MOSFETs P-Channel -30V MOSFET Transistor MOSFET P-CH 30V 21.1A POWER56 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P Channel, -30V, 0.0027Ohm, -49A, Power 56-8; Channel Type Onsemi
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts 30 volts -30 volts
PD 2500 to 73000 milliwatts 2500 milliwatts 2.5 milliwatts 2500 milliwatts 73000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; Power56 8-PowerTDFN 8-PowerTDFN Reel 8-PowerTDFN TO-3
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