onsemi FDMS5362LF085

Description
N-Channel Power Trench MOSFET
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Description
N-Channel Power Trench MOSFET
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Datasheet
Datasheet Summary
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N-Channel Power Trench MOSFET designed for automotive and 12V system switching applications, housed in a Power 56 package with a thermal resistance junction-to-case of 3.6°C/W. It has a drain-to-source voltage rating of 60V, continuous drain current of 17.6A at 25°C, and a typical on-resistance of 26mΩ at VGS=10V. The device meets AEC-Q101 qualifications and is RoHS compliant, with an operating temperature range of -55°C to +175°C.

Datasheet Summary
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N-Channel Power Trench MOSFET designed for automotive and 12V system switching applications, housed in a Power 56 package with a thermal resistance junction-to-case of 3.6°C/W. It has a drain-to-source voltage rating of 60V, continuous drain current of 17.6A at 25°C, and a typical on-resistance of 26mΩ at VGS=10V. The device meets AEC-Q101 qualifications and is RoHS compliant, with an operating temperature range of -55°C to +175°C.

Suppliers

Company
Product
Description
Supplier Links
 - FDMS5362LF085 - Rochester Electronics
Newburyport, MA, United States
N-Channel Power Trench MOSFET

N-Channel Power Trench MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number FDMS5362LF085
Polarity N-Channel
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