MOSFET N-CH 80V 19.4A/100A 8PQFN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016059-FDMS039N08B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6), Power56
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 19.4A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 7600pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N-Channel 80V 19.4A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 80V 19.4A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 80V 19.4A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 80V 19.4A/100A 8PQFN
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMS039N08B | 016059-FDMS039N08B | FDMS039N08BDKR-ND | FDMS039N08B | FDMS039N08B |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMS039N08B | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 80 volts | 80 volts | |||
| IDSS | 19400 milliamps |
