onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8884 FDMC8884

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016046-FDMC8884 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta), 15A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 685pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19 mOhm @ 9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016046-FDMC8884 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta), 15A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 685pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19 mOhm @ 9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8884 - 016046-FDMC8884 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8884
016046-FDMC8884
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8884 016046-FDMC8884
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016046-FDMC8884 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta), 15A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 685pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19 mOhm @ 9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016046-FDMC8884
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta), 15A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 685pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19 mOhm @ 9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics
Quantity per package: 3k pcs

Buy Now Datasheet
 - FDMC8884 - Rochester Electronics
Newburyport, MA, United States
9A, 30V, 0.019ohm, N-Channel Power MOSFET

9A, 30V, 0.019ohm, N-Channel Power MOSFET

Supplier's Site Datasheet
 - FDMC8884 - Rochester Electronics
Newburyport, MA, United States
9A, 30V, 0.019ohm, N-Channel Power MOSFET

9A, 30V, 0.019ohm, N-Channel Power MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMC8884TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC8884TR-ND
Single FETs, MOSFETs FDMC8884TR-ND
N-Channel 30V 9A (Ta), 15A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 30V 9A (Ta), 15A (Tc) 2.3W (Ta), 18W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC8884 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC8884
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC8884
MOSFET N-CH 30V 9A/15A 8MLP

MOSFET N-CH 30V 9A/15A 8MLP

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors RF Transistors
Product Number 016046-FDMC8884 FDMC8884 FDMC8884TR-ND FDMC8884
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8884 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 2300 to 18000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data