The FDMC8622 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage of 100V and a continuous drain current rating of 16A. It utilizes Shielded Gate PowerTrench technology, which optimizes on-resistance and switching performance. The device has a maximum on-resistance (rDS(on)) of 56 mOc at a gate-source voltage of 10V and a drain current of 4A, making it suitable for efficient power management. The MOSFET is housed in a compact MLP 3.3x3.3 surface mount package and is RoHS compliant. It is ideal for use in DC-DC converters and other power applications where space and efficiency are critical. The operating temperature range is from -55¬8C to +150¬8C, ensuring reliability in various environments.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038204-FDMC8622
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4A (Ta), 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7.3nC @ 10V
Max Input Capacitance: 402pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 56 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 100V 4A/16A 8MLP
Power Field-Effect Transistor, 4A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
N-Channel 100V 4A (Ta), 16A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 100V 4A (Ta), 16A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 100V 4A (Ta), 16A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET N-CH 100V 4A/16A 8MLP
MOSFET, N CHANNEL, 100V, 16A, MLP 3.3X3.3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.9V RoHS Compliant: Yes
MOSFET 100V N-Channel PowerTrench MOSFET
| Win Source Electronics | ODG (Origin Data Global) | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038204-FDMC8622 | FDMC8622 | FDMC8622 | FDMC8622DKR-ND | FDMC8622 | 88T3280 | FDMC8622 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8622 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 100V, 16A, Mlp 3.3X3.3; Channel Type Onsemi | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 2500 to 31000 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-MLP (3.3x3.3) | 8-PowerWDFN | WFN | 8-PowerWDFN | 8-PowerWDFN | TO-3 |
