onsemi Single FETs, MOSFETs FDMC86160

Power Field-Effect Transistor, 9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

MOSFETs 100V N-Chan Pwr Clip PowerTrench MOSFET Product overview: FDMC86160 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC86160 can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1173815-FDMC86160
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 2.3W, 54W
Alternative Parts (Cross-Reference): CSD19537Q3T; BSZ160N10NS3GXT; FDMC86160; BSZ160N10NS3 G;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 9A, 43A
Rds On (Maximum) at Id, Vgs: 14mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1290pF at 50V

MOSFET N CH 100V 9A POWER33