onsemi FETs - Single - FDMC86160 FDMC86160

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173815-FDMC86160 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: 8-PowerWDFN Power Dissipation (Maximum): 2.3W, 54W Alternative Parts (Cross-Reference): CSD19537Q3T; BSZ160N10NS3GXT; FDMC86160; BSZ160N10NS3 G; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 9A, 43A Rds On (Maximum) at Id, Vgs: 14mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1290pF at 50V
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1173815-FDMC86160 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: 8-PowerWDFN Power Dissipation (Maximum): 2.3W, 54W Alternative Parts (Cross-Reference): CSD19537Q3T; BSZ160N10NS3GXT; FDMC86160; BSZ160N10NS3 G; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 9A, 43A Rds On (Maximum) at Id, Vgs: 14mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1290pF at 50V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FDMC86160 - 1173815-FDMC86160 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDMC86160
1173815-FDMC86160
FETs - Single - FDMC86160 1173815-FDMC86160
Manufacturer: ON Semiconductor Win Source Part Number: 1173815-FDMC86160 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: 8-PowerWDFN Power Dissipation (Maximum): 2.3W, 54W Alternative Parts (Cross-Reference): CSD19537Q3T; BSZ160N10NS3GXT; FDMC86160; BSZ160N10NS3 G; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 9A, 43A Rds On (Maximum) at Id, Vgs: 14mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1290pF at 50V

Manufacturer: ON Semiconductor
Win Source Part Number: 1173815-FDMC86160
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 2.3W, 54W
Alternative Parts (Cross-Reference): CSD19537Q3T; BSZ160N10NS3GXT; FDMC86160; BSZ160N10NS3 G;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 9A, 43A
Rds On (Maximum) at Id, Vgs: 14mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1290pF at 50V

Buy Now Datasheet
 - FDMC86160 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

Power Field-Effect Transistor, 9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMC86160 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMC86160
Single FETs, MOSFETs FDMC86160
MOSFET N CH 100V 9A POWER33

MOSFET N CH 100V 9A POWER33

Supplier's Site Datasheet
Singapore
100V MOSFET Transistor
2088-FDMC86160
100V MOSFET Transistor 2088-FDMC86160
MOSFETs 100V N-Chan Pwr Clip PowerTrench MOSFET Product overview: FDMC86160 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC86160 can be used for catalog matching and distributor lookup.

MOSFETs 100V N-Chan Pwr Clip PowerTrench MOSFET Product overview: FDMC86160 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC86160 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - FDMC86160CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC86160CT-ND
Single FETs, MOSFETs FDMC86160CT-ND
N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC86160DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC86160DKR-ND
Single FETs, MOSFETs FDMC86160DKR-ND
N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC86160TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC86160TR-ND
Single FETs, MOSFETs FDMC86160TR-ND
N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC86160 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC86160
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC86160
MOSFET N CH 100V 9A POWER33

MOSFET N CH 100V 9A POWER33

Supplier's Site
Mosfet Transistor, N Channel, 43 A, 100 V, 0.0112 Ohm, 10 V, 2.9 V Rohs Compliant Onsemi - 55W4083 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 43 A, 100 V, 0.0112 Ohm, 10 V, 2.9 V Rohs Compliant Onsemi
55W4083
Mosfet Transistor, N Channel, 43 A, 100 V, 0.0112 Ohm, 10 V, 2.9 V Rohs Compliant Onsemi 55W4083
MOSFET Transistor, N Channel, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 100V N-Chan Pwr Clip PowerTrench MOSFET

MOSFET 100V N-Chan Pwr Clip PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1173815-FDMC86160 FDMC86160 FDMC86160 2088-FDMC86160 FDMC86160CT-ND FDMC86160 55W4083 FDMC86160
Product Name FETs - Single - FDMC86160 Single FETs, MOSFETs 100V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 43 A, 100 V, 0.0112 Ohm, 10 V, 2.9 V Rohs Compliant Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 2300 to 54000 milliwatts 2300 milliwatts 54 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 PQFN-PD-33PC 8-PowerWDFN Reel 8-PowerWDFN 8-PowerWDFN TO-3
Unlock Full Specs
to access all available technical data