onsemi Single FETs, MOSFETs FDMC86106LZ

Description
MOSFET N-CH 100V 3.3A POWER33
Request a Quote Datasheet
Description
MOSFET N-CH 100V 3.3A POWER33
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMC86106LZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMC86106LZ
Single FETs, MOSFETs FDMC86106LZ
MOSFET N-CH 100V 3.3A POWER33

MOSFET N-CH 100V 3.3A POWER33

Supplier's Site
 - FDMC86106LZ - Rochester Electronics
Newburyport, MA, United States
MOSFET N-CH 100V 3.3A POWER33

MOSFET N-CH 100V 3.3A POWER33

Supplier's Site Datasheet
 - FDMC86106LZ - Rochester Electronics
Newburyport, MA, United States
MOSFET N-CH 100V 3.3A POWER33

MOSFET N-CH 100V 3.3A POWER33

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC86106LZ - 102220-FDMC86106LZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC86106LZ
102220-FDMC86106LZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC86106LZ 102220-FDMC86106LZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 102220-FDMC86106LZ Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 19W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.3A (Ta), 7.5A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 310pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 103 mOhm @ 3.3A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 102220-FDMC86106LZ
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 19W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.3A (Ta), 7.5A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 310pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 103 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 100V MOSFET Transistor
278-FDMC86106LZ
N-Channel 100V MOSFET Transistor 278-FDMC86106LZ
MOSFET 100V N-Channel PowerTrench MOSFET Product overview: FDMC86106LZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC86106LZ can be used for catalog matching and distributor lookup.

MOSFET 100V N-Channel PowerTrench MOSFET Product overview: FDMC86106LZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC86106LZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 100V N-Channel PowerTrench MOSFET - 598-FDMC86106LZ - Utmel Electronic Limited
Hong Kong, China
MOSFET 100V N-Channel PowerTrench MOSFET
598-FDMC86106LZ
MOSFET 100V N-Channel PowerTrench MOSFET 598-FDMC86106LZ
MOSFET 100V N-Channel PowerTrench MOSFET

MOSFET 100V N-Channel PowerTrench MOSFET

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDMC86106LZ FDMC86106LZ 102220-FDMC86106LZ 278-FDMC86106LZ 598-FDMC86106LZ
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC86106LZ N-Channel 100V MOSFET Transistor MOSFET 100V N-Channel PowerTrench MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts 100 volts
IDSS 3300 milliamps
PD 2300 milliwatts 2300 to 19000 milliwatts 19000 milliwatts 19000 milliwatts
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