onsemi Single FETs, MOSFETs FDMC8296

Description
N-Channel 30V 12A (Ta), 18A (Tc) 2.3W (Ta), 27W (Tc) Surface Mount 8-MLP (3.3x3.3)
Request a Quote Datasheet
Description
N-Channel 30V 12A (Ta), 18A (Tc) 2.3W (Ta), 27W (Tc) Surface Mount 8-MLP (3.3x3.3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMC8296TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC8296TR-ND
Single FETs, MOSFETs FDMC8296TR-ND
N-Channel 30V 12A (Ta), 18A (Tc) 2.3W (Ta), 27W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 30V 12A (Ta), 18A (Tc) 2.3W (Ta), 27W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8296 - 016039-FDMC8296 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8296
016039-FDMC8296
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8296 016039-FDMC8296
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016039-FDMC8296 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 18A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1385pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016039-FDMC8296
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 18A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1385pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Singapore
N-Channel 30V 18A MOSFET Transistor
278-FDMC8296
N-Channel 30V 18A MOSFET Transistor 278-FDMC8296
N-Channel Power Trench® MOSFET 30V, 18A, 8.0mΩ, 3000-REEL Product overview: FDMC8296 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC8296 can be used for catalog matching and distributor lookup.

N-Channel Power Trench® MOSFET 30V, 18A, 8.0mΩ, 3000-REEL Product overview: FDMC8296 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC8296 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC8296 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC8296
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC8296
MOSFET N-CH 30V 12A/18A 8MLP

MOSFET N-CH 30V 12A/18A 8MLP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMC8296TR-ND 016039-FDMC8296 278-FDMC8296 FDMC8296
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC8296 N-Channel 30V 18A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type 8-PowerWDFN SOT3; 8-MLP (3.3x3.3) 8-PowerWDFN
V(BR)DSS 30 volts
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5 suppliers