onsemi Single FETs, MOSFETs FDMC7680

Power Field-Effect Transistor, 14.8A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 14.8A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

N-Channel 30V 14.8A (Ta) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)

MOSFET N-CH 30V 14.8A 8MLP

MOSFET N-CH 30V 14.8A 8MLP

N-Channel 30V 14.8A (Ta) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)

MOSFET N-CH 30V 14.8A 8MLP

MOSFET N-CH 30V 14.8A 8MLP

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016035-FDMC7680
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Family Name: FDMC7680
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2855pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.2 mOhm @ 14.8A, 10V
Alternative Parts (Cross-Reference): RQ3E180BNTB; TSM085N03PQ33 RGG; RQ3E130MNTB; RQ3E130MNTB1;
Introduction Date: July 01, 2009
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs