MOSFET N-CH 30V 14.8A 8MLP Product overview: FDMC7680 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC7680 can be used for catalog matching and distributor lookup.
N-Channel 30V 14.8A (Ta) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET N-CH 30V 14.8A 8MLP
MOSFET N-CH 30V 14.8A 8MLP
N-Channel 30V 14.8A (Ta) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET N-CH 30V 14.8A 8MLP
MOSFET N-CH 30V 14.8A 8MLP
Power Field-Effect Transistor, 14.8A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 14.8A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016035-FDMC7680
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Family Name: FDMC7680
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2855pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.2 mOhm @ 14.8A, 10V
Alternative Parts (Cross-Reference): RQ3E180BNTB; TSM085N03PQ33 RGG; RQ3E130MNTB; RQ3E130MNTB1;
Introduction Date: July 01, 2009
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-Chan 30/20V PowerTrench
MOSFET N-CH 30V 14.8A 8MLP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDMC7680 | FDMC7680TR-ND | FDMC7680 | 016035-FDMC7680 | 598-FDMC7680 | FDMC7680 | FDMC7680 |
| Product Name | 30V 14.8A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7680 | MOSFET N-Chan 30/20V PowerTrench | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| Transconductance | 0.0680 kS | ||||||
| PD | 2.3 milliwatts | 2300 to 31000 milliwatts | 2300 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |