onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7660S FDMC7660S

Description
Power Field-Effect Transistor, 40A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 40A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDMC7660S - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 40A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

Power Field-Effect Transistor, 40A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7660S - 016032-FDMC7660S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7660S
016032-FDMC7660S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7660S 016032-FDMC7660S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016032-FDMC7660S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power33 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 20A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 66nC @ 10V Max Input Capacitance: 4325pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016032-FDMC7660S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Power33
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 4325pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMC7660SFSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC7660SFSCT-ND
Single FETs, MOSFETs FDMC7660SFSCT-ND
N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33

N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC7660SFSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC7660SFSDKR-ND
Single FETs, MOSFETs FDMC7660SFSDKR-ND
N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33

N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC7660SFSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC7660SFSTR-ND
Single FETs, MOSFETs FDMC7660SFSTR-ND
N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33

N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC7660S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC7660S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC7660S
MOSFET N-CH 30V 20A/40A POWER33

MOSFET N-CH 30V 20A/40A POWER33

Supplier's Site
Mosfet, N Channel, 30V, 40A, Power 33, Full Reel; Channel Type Onsemi - 92R5536 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 40A, Power 33, Full Reel; Channel Type Onsemi
92R5536
Mosfet, N Channel, 30V, 40A, Power 33, Full Reel; Channel Type Onsemi 92R5536
MOSFET, N CHANNEL, 30V, 40A, POWER 33, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.3W RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 40A, POWER 33, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.3W RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V N-Chan SyncFET PowerTrench

MOSFET 30V N-Chan SyncFET PowerTrench

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDMC7660S 016032-FDMC7660S FDMC7660SFSCT-ND FDMC7660S 92R5536 FDMC7660S
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC7660S Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 30V, 40A, Power 33, Full Reel; Channel Type Onsemi MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
rDS(on) 0.0022 ohms
Package Type PQFN-33CLIP SOT3; Power33 8-PowerTDFN 8-PowerTDFN TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data