onsemi FET, MOSFET Arrays FDMC6890NZ

Description
Mosfet Array 2 N-Channel (Dual) 20V 4A 1.92W, 1.78W Surface Mount MicroFET 3x3mm
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 20V 4A 1.92W, 1.78W Surface Mount MicroFET 3x3mm
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - FDMC6890NZTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDMC6890NZTR-ND
FET, MOSFET Arrays FDMC6890NZTR-ND
Mosfet Array 2 N-Channel (Dual) 20V 4A 1.92W, 1.78W Surface Mount MicroFET 3x3mm

Mosfet Array 2 N-Channel (Dual) 20V 4A 1.92W, 1.78W Surface Mount MicroFET 3x3mm

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6890NZ - 016029-FDMC6890NZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6890NZ
016029-FDMC6890NZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6890NZ 016029-FDMC6890NZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016029-FDMC6890NZ Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: MicroFET 3x3mm Maximum Power Dissipation: 1.92W, 1.78W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 3.4nC @ 4.5V Max Input Capacitance: 270pF @ 10V Maximum Rds On at Id,Vgs: 68 mOhm @ 4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016029-FDMC6890NZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: MicroFET 3x3mm
Maximum Power Dissipation: 1.92W, 1.78W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 3.4nC @ 4.5V
Max Input Capacitance: 270pF @ 10V
Maximum Rds On at Id,Vgs: 68 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

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Sheung Wan, Hong Kong
MOSFET 20V Dual N-Ch PowerTrench MOSFET

MOSFET 20V Dual N-Ch PowerTrench MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC6890NZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC6890NZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC6890NZ
MOSFET 2N-CH 20V 4A MICROFET 3X3

MOSFET 2N-CH 20V 4A MICROFET 3X3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMC6890NZTR-ND 016029-FDMC6890NZ FDMC6890NZ FDMC6890NZ
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6890NZ MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 6-WDFN Exposed Pad SOT3; MicroFET 3x3mm
Polarity N-Channel
V(BR)DSS 20 volts
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