onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6675BZ FDMC6675BZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016027-FDMC6675BZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta), 20A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 2865pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 14.4 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6675BZ - 016027-FDMC6675BZ - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDMC6675BZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDMC6675BZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMC6675BZTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMC6675BZCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC6675BZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P Ch, 30V, 20A, Mlp 3.3X3.3; Transistor Polarity Onsemi - 88T3263 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, P Channel, -30V, 0.0107Ohm, -20A, Mlp-8; Transistor Polarity Onsemi - 85W3143 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016027-FDMC6675BZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta), 20A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 2865pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 14.4 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6675BZ - 016027-FDMC6675BZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6675BZ
016027-FDMC6675BZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6675BZ 016027-FDMC6675BZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016027-FDMC6675BZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta), 20A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 2865pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 14.4 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016027-FDMC6675BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.5A (Ta), 20A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2865pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 14.4 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMC6675BZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMC6675BZ
Single FETs, MOSFETs FDMC6675BZ
MOSFET P-CH 30V 9.5A/20A 8MLP

MOSFET P-CH 30V 9.5A/20A 8MLP

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMC6675BZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC6675BZDKR-ND
Single FETs, MOSFETs FDMC6675BZDKR-ND
P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - FDMC6675BZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC6675BZTR-ND
Single FETs, MOSFETs FDMC6675BZTR-ND
P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - FDMC6675BZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC6675BZCT-ND
Single FETs, MOSFETs FDMC6675BZCT-ND
P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC6675BZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC6675BZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC6675BZ
MOSFET P-CH 30V 9.5A/20A 8MLP

MOSFET P-CH 30V 9.5A/20A 8MLP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMC6675BZ
MOSFET FDMC6675BZ
MOSFET -30V 20A P-Channel PowerTrench

MOSFET -30V 20A P-Channel PowerTrench

Buy Now Datasheet
Mosfet, P Ch, 30V, 20A, Mlp 3.3X3.3; Transistor Polarity Onsemi - 88T3263 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Ch, 30V, 20A, Mlp 3.3X3.3; Transistor Polarity Onsemi
88T3263
Mosfet, P Ch, 30V, 20A, Mlp 3.3X3.3; Transistor Polarity Onsemi 88T3263
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V RoHS Compliant: Yes

MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -30V, 0.0107Ohm, -20A, Mlp-8; Transistor Polarity Onsemi - 85W3143 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -30V, 0.0107Ohm, -20A, Mlp-8; Transistor Polarity Onsemi
85W3143
Mosfet, P Channel, -30V, 0.0107Ohm, -20A, Mlp-8; Transistor Polarity Onsemi 85W3143
MOSFET, P CHANNEL, -30V, 0.0107OHM, -20A, MLP-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0107ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

MOSFET, P CHANNEL, -30V, 0.0107OHM, -20A, MLP-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0107ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016027-FDMC6675BZ FDMC6675BZ FDMC6675BZDKR-ND FDMC6675BZ FDMC6675BZ 88T3263 85W3143
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6675BZ Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P Ch, 30V, 20A, Mlp 3.3X3.3; Transistor Polarity Onsemi Mosfet, P Channel, -30V, 0.0107Ohm, -20A, Mlp-8; Transistor Polarity Onsemi
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts 30 volts
PD 2300 to 36000 milliwatts 2300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-MLP (3.3x3.3) 8-PowerWDFN 8-PowerWDFN Surface Mount TO-3 TO-3
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