Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016027-FDMC6675BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.5A (Ta), 20A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2865pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 14.4 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET P-CH 30V 9.5A/20A 8MLP
P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)
P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)
P-Channel 30V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET P-CH 30V 9.5A/20A 8MLP
MOSFET -30V 20A P-Channel PowerTrench
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, 0.0107OHM, -20A, MLP-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0107ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016027-FDMC6675BZ | FDMC6675BZ | FDMC6675BZDKR-ND | FDMC6675BZ | FDMC6675BZ | 88T3263 | 85W3143 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC6675BZ | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P Ch, 30V, 20A, Mlp 3.3X3.3; Transistor Polarity Onsemi | Mosfet, P Channel, -30V, 0.0107Ohm, -20A, Mlp-8; Transistor Polarity Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 2300 to 36000 milliwatts | 2300 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-MLP (3.3x3.3) | 8-PowerWDFN | 8-PowerWDFN | Surface Mount | TO-3 | TO-3 |