onsemi FDMC6675BZ-P

Description
Power Field-Effect Transistor, 20A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
  • FDMC6675BZ-P - Rochester Electronics
    Rochester Electronics
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Description
Power Field-Effect Transistor, 20A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

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Product
Description
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- FDMC6675BZ-P - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDMC6675BZ-P
FDMC6675BZ-P
Power Field-Effect Transistor, 20A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 20A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number FDMC6675BZ-P
Polarity P-Channel
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