onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC0310AS FDMC0310AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016020-FDMC0310AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 3165pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016020-FDMC0310AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 3165pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC0310AS - 016020-FDMC0310AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC0310AS
016020-FDMC0310AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC0310AS 016020-FDMC0310AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016020-FDMC0310AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 19A (Ta), 21A (Tc) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 3165pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016020-FDMC0310AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta), 21A (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 3165pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMC0310ASTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC0310ASTR-ND
Single FETs, MOSFETs FDMC0310ASTR-ND
N-Channel 30V 19A (Ta), 21A (Tc) 2.4W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 30V 19A (Ta), 21A (Tc) 2.4W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC0310AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC0310AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC0310AS
MOSFET N-CH 30V 19A/21A 8MLP

MOSFET N-CH 30V 19A/21A 8MLP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PT8 NCH 30V/20V S ML

MOSFET PT8 NCH 30V/20V S ML

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016020-FDMC0310AS FDMC0310ASTR-ND FDMC0310AS FDMC0310AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC0310AS Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2400 to 36000 milliwatts
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