onsemi Single FETs, MOSFETs FDMC012N03

Description
MOSFET N-CH 30V 35A/185A POWER33
Request a Quote Datasheet
Description
MOSFET N-CH 30V 35A/185A POWER33
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDMC012N03 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMC012N03
Single FETs, MOSFETs FDMC012N03
MOSFET N-CH 30V 35A/185A POWER33

MOSFET N-CH 30V 35A/185A POWER33

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMC012N03DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC012N03DKR-ND
Single FETs, MOSFETs FDMC012N03DKR-ND
N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount Power33

N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC012N03TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC012N03TR-ND
Single FETs, MOSFETs FDMC012N03TR-ND
N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount Power33

N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount Power33

Buy Now Datasheet
Single FETs, MOSFETs - FDMC012N03CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC012N03CT-ND
Single FETs, MOSFETs FDMC012N03CT-ND
N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount Power33

N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount Power33

Buy Now Datasheet
FETs - Single - FDMC012N03 - 813123-FDMC012N03 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FDMC012N03
813123-FDMC012N03
FETs - Single - FDMC012N03 813123-FDMC012N03
Manufacturer: ON Semiconductor Win Source Part Number: 813123-FDMC012N03 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30V Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerWDFN Power Dissipation (Maximum): 2.3W , 64W (Tc) Popularity: Low Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.23mOhm at 35A, 10V Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 8183pF at 15V Current - Continuous Drain (Id) at 25°C: 35A , 185A (Tc) Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±12V

Manufacturer: ON Semiconductor
Win Source Part Number: 813123-FDMC012N03
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 2.3W , 64W (Tc)
Popularity: Low
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.23mOhm at 35A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 8183pF at 15V
Current - Continuous Drain (Id) at 25°C: 35A , 185A (Tc)
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±12V

Buy Now
 - FDMC012N03 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 185A I(D), 30V, 0.00123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

Power Field-Effect Transistor, 185A I(D), 30V, 0.00123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

Supplier's Site Datasheet
Mosfet, N-Ch, 185A, 30V, Pqfn; Transistor Polarity Onsemi - 07AH3912 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 185A, 30V, Pqfn; Transistor Polarity Onsemi
07AH3912
Mosfet, N-Ch, 185A, 30V, Pqfn; Transistor Polarity Onsemi 07AH3912
MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:185A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:185A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET PT9 N-ch 30V/12V Power Trench MOSFET

MOSFET PT9 N-ch 30V/12V Power Trench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC012N03 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC012N03
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC012N03
MOSFET N-CH 30V 35A/185A POWER33

MOSFET N-CH 30V 35A/185A POWER33

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Rochester Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDMC012N03 FDMC012N03DKR-ND 813123-FDMC012N03 FDMC012N03 07AH3912 FDMC012N03 FDMC012N03
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - FDMC012N03 Mosfet, N-Ch, 185A, 30V, Pqfn; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 35000 milliamps 185000 milliamps
PD 2300 milliwatts 2300 to 64000 milliwatts
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