onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA507PZ FDMA507PZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016011-FDMA507PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta) Family Name: FDMA507PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-WDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.8A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 42nC @ 5V Max Input Capacitance: 2015pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 5V Alternative Parts (Cross-Reference): DMP2023UFDF-7; DMP2023UFDF-13; LP2317DT2AG; SiA429DJT-T1-GE3; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016011-FDMA507PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta) Family Name: FDMA507PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-WDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.8A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 42nC @ 5V Max Input Capacitance: 2015pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 5V Alternative Parts (Cross-Reference): DMP2023UFDF-7; DMP2023UFDF-13; LP2317DT2AG; SiA429DJT-T1-GE3; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking Quantity per package: 3k pcs
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA507PZ - 016011-FDMA507PZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA507PZ
016011-FDMA507PZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA507PZ 016011-FDMA507PZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016011-FDMA507PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta) Family Name: FDMA507PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-WDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.8A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 42nC @ 5V Max Input Capacitance: 2015pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 5V Alternative Parts (Cross-Reference): DMP2023UFDF-7; DMP2023UFDF-13; LP2317DT2AG; SiA429DJT-T1-GE3; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016011-FDMA507PZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta)
Family Name: FDMA507PZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.8A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 42nC @ 5V
Max Input Capacitance: 2015pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 5V
Alternative Parts (Cross-Reference): DMP2023UFDF-7; DMP2023UFDF-13; LP2317DT2AG; SiA429DJT-T1-GE3;
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking
Quantity per package: 3k pcs

Buy Now Datasheet
 - FDMA507PZ - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 7.8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 7.8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMA507PZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMA507PZ
Single FETs, MOSFETs FDMA507PZ
MOSFET P-CH 20V 7.8A 6MICROFET

MOSFET P-CH 20V 7.8A 6MICROFET

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMA507PZCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMA507PZCT-ND
Single FETs, MOSFETs FDMA507PZCT-ND
P-Channel 20V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

P-Channel 20V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - FDMA507PZDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMA507PZDKR-ND
Single FETs, MOSFETs FDMA507PZDKR-ND
P-Channel 20V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

P-Channel 20V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - FDMA507PZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMA507PZTR-ND
Single FETs, MOSFETs FDMA507PZTR-ND
P-Channel 20V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

P-Channel 20V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
Mosfet, P Channel, -20V, 0.019Ohm, -7.8A, Microfet-6, Full Reel; Channel Type Onsemi - 92R5529 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -20V, 0.019Ohm, -7.8A, Microfet-6, Full Reel; Channel Type Onsemi
92R5529
Mosfet, P Channel, -20V, 0.019Ohm, -7.8A, Microfet-6, Full Reel; Channel Type Onsemi 92R5529
MOSFET, P CHANNEL, -20V, 0.019OHM, -7.8A, MICROFET-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; No. of Pins:6Pins RoHS Compliant: Yes

MOSFET, P CHANNEL, -20V, 0.019OHM, -7.8A, MICROFET-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, P Channel, -7.8 A, -20 V, 0.019 Ohm, -5 V, -500 Mv Rohs Compliant Onsemi - 55T6315 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -7.8 A, -20 V, 0.019 Ohm, -5 V, -500 Mv Rohs Compliant Onsemi
55T6315
Mosfet Transistor, P Channel, -7.8 A, -20 V, 0.019 Ohm, -5 V, -500 Mv Rohs Compliant Onsemi 55T6315
MOSFET Transistor, P Channel, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -20V, 0.019Ohm, -7.8A, Microfet-6; Transistor Polarity Onsemi - 84W8859 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -20V, 0.019Ohm, -7.8A, Microfet-6; Transistor Polarity Onsemi
84W8859
Mosfet, P Channel, -20V, 0.019Ohm, -7.8A, Microfet-6; Transistor Polarity Onsemi 84W8859
MOSFET, P CHANNEL, -20V, 0.019OHM, -7.8A, MICROFET-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.8A; On Resistance Rds(on):0.019ohm; Transistor Mounting:Surface Mount; No. of Pins:6PinsRoHS Compliant: Yes

MOSFET, P CHANNEL, -20V, 0.019OHM, -7.8A, MICROFET-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.8A; On Resistance Rds(on):0.019ohm; Transistor Mounting:Surface Mount; No. of Pins:6PinsRoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMA507PZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMA507PZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMA507PZ
MOSFET P-CH 20V 7.8A 6MICROFET

MOSFET P-CH 20V 7.8A 6MICROFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V Single P Channel PowerTrench Mosfet

MOSFET 20V Single P Channel PowerTrench Mosfet

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016011-FDMA507PZ FDMA507PZ FDMA507PZ FDMA507PZCT-ND 92R5529 55T6315 84W8859 FDMA507PZ FDMA507PZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA507PZ Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, P Channel, -20V, 0.019Ohm, -7.8A, Microfet-6, Full Reel; Channel Type Onsemi Mosfet Transistor, P Channel, -7.8 A, -20 V, 0.019 Ohm, -5 V, -500 Mv Rohs Compliant Onsemi Mosfet, P Channel, -20V, 0.019Ohm, -7.8A, Microfet-6; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 2400 milliwatts 2400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-MicroFET (2x2) UQFN 6-WDFN Exposed Pad 6-WDFN Exposed Pad TO-3 TO-3 TO-3 6-WDFN Exposed Pad
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