P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
MOSFETs -20V Single P-Ch. PowerTrench MOSFET Product overview: FDMA291P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMA291P can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016006-FDMA291P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta)
Family Name: FDMA291P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.6A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1000pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 42 mOhm @ 6.6A, 4.5V
Alternative Parts (Cross-Reference): SiA443DJ-T1-GE3; SiA443DJ; SiA461DJ-T1-GE3; LP2317DT2AG;
Introduction Date: May 31, 2006
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET -20V Single P-Ch. PowerTrench MOSFET
TRANSISTOR, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET P-CH 20V 6.6A 6MICROFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | FDMA291PCT-ND | 2088-FDMA291P | 016006-FDMA291P | FDMA291P | 20M1167 | FDMA291P |
| Product Name | Single FETs, MOSFETs | -20V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA291P | MOSFET | Transistor, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| Package Type | 6-WDFN Exposed Pad | Reel | SOT3; 6-MicroFET (2x2) | TO-3 | Surface Mount | |
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0160 kS | |||||
| PD | 2.4 milliwatts | 2400 milliwatts |
